IndiumV3, Russie, Analysis, bibRecord, 000266

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Identifieur interne : 000266 ( Russie/Analysis ); précédent : 000265; suivant : 000267

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Auteurs : RBID : Pascal:07-0317384

Descripteurs français

Pascal (Inist)
- Exciton, Injection porteur charge, Point quantique, Composé binaire, Indium arséniure, Composé ternaire, Gallium arséniure, Processus ultrarapide, Semiconducteur, InAs, As In, As Ga In, InGaAs, 7847, Méthode pompe sonde, Spectrométrie ultrarapide.

English descriptors

KwdEn :
- Binary compounds, Charge carrier injection, Excitons, Gallium arsenides, Indium arsenides, Pump probe method, Quantum dots, Semiconductor materials, Ternary compounds, Ultrafast process, Ultrafast spectroscopy.

Abstract

An ultrafast pump-probe method based on differing polarization properties of neutral and charged excitons in semiconductor quantum dots (QDs) is employed to study carrier dynamics in InGaAs QDs grown in nominally undoped, modulation doped and p-i-n structures. We find that at low temperature even in the nominally undoped samples there are large fractions of charged dots. It is also demonstrated that for bipolar electrical injection there is a high probability of the independent capture of electrons or holes into the dots, resulting in dot charging. Voltage-control of the charged exciton population, created via a combination of electrical and optical excitation, which exhibits a long lived spin-polarization (or spin-memory) is demonstrated.

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to stream Main, to step Repository: 007D86
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Links to Exploration step

Pascal:07-0317384

Le document en format XML

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<author><name sortKey="Tartakovskii, A I" uniqKey="Tartakovskii A">A. I. Tartakovskii</name>
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<author><name sortKey="Savelyev, A V" uniqKey="Savelyev A">A. V. Savelyev</name>
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<author><name sortKey="Makhonin, M N" uniqKey="Makhonin M">M. N. Makhonin</name>
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<front><div type="abstract" xml:lang="en">An ultrafast pump-probe method based on differing polarization properties of neutral and charged excitons in semiconductor quantum dots (QDs) is employed to study carrier dynamics in InGaAs QDs grown in nominally undoped, modulation doped and p-i-n structures. We find that at low temperature even in the nominally undoped samples there are large fractions of charged dots. It is also demonstrated that for bipolar electrical injection there is a high probability of the independent capture of electrons or holes into the dots, resulting in dot charging. Voltage-control of the charged exciton population, created via a combination of electrical and optical excitation, which exhibits a long lived spin-polarization (or spin-memory) is demonstrated.</div>
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   |texte=   Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection
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Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri